Product Summary
The PMK50XP is an extremely low level P-channel enhancement mode Field-Effect Transistor (FET). It is in a plastic package and using TrenchMOS technology. It is designed and qualified for use in computing, communications, consumer and industrial applications only. Its applications are battery management and load switching. It is plastic small outline package.
Parametrics
Absolute maximum ratings: (1)VDS, drain-source voltage: max=20V when 25 ℃ ≤ Tj ≤150℃; (2)VDGR, drain-gate voltage: max=-20V when 25 ℃ ≤ Tj ≤ 150 ℃; RGS = 20 kΩ; (3)VGS, gate-source voltage: min=-12V, max=12V; (4)ID, drain current: max=-7.9A when Tsp = 25 ℃, VGS = -4.5 V;max=-5A when Tsp = 100 ℃, VGS = -4.5 V; (5)IDM, peak drain current: max=-31.6A when Tsp = 25 ℃, tp ≤ 10 μs, pulsed; (6)Ptot, total power dissipationmax=5W when Tsp = 25 ℃; (7)Tstg, storage temperature: min=-55℃, max=150 ℃; (8)Tj , junction temperature: min=-55℃, max=150 ℃; (9)Source-drain diode: IS, source current: max=-4.1A when Tsp=25℃;ISM, peak source current: max=-16.4A when Tsp = 25 ℃, tp ≤ 10 μs, pulsed.
Features
Features: (1)Low conduction losses due to low; (2)on-state resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMK50XP,518 |
NXP Semiconductors |
MOSFET MOSFET P-CH FET 20V 7.9A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
PMK50000 |
1/4 DIN TO 1/8 DIN PANEL |
Data Sheet |
|
|
||||||||||||||
PMK50XP,518 |
NXP Semiconductors |
MOSFET MOSFET P-CH FET 20V 7.9A |
Data Sheet |
|
|
|||||||||||||
PMK5218TP |
Ericsson Power Modules |
DC/DC Converters .8-3.6 Vdc 8A Iso Input 5V 28.8W |
Data Sheet |
Negotiable |
|