(China (Mainland))
Product Summary
The GT25J101 is a Silicon N Channel IGBT for high power switching applications and motor control applications.
Parametrics
GT25J101 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 600V; (2)Gate-Emitter Voltage, VGES: ±20V; (3)Collector Current: DC, IC: 25A; 1ms; ICP: 50A; (4)Collector Power Dissipation (Tc = 25℃), PC: 150W.
Features
GT25J101 features: (1)High Input Impedance; (2)High Speed: tf=0.35/μs (Max.); (3)Low Saturation Voltage: VCE (sat) = 4.0V (Max.); (4)Enhancement-Mode.
Diagrams
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 GT25 |
Other |
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Data Sheet |
Negotiable |
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GT2531 |
Other |
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Data Sheet |
Negotiable |
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GT25G101 |
Other |
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Data Sheet |
Negotiable |
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GT25G101(Q) |
Toshiba |
IGBT Transistors IGBT 400V 170A |
Data Sheet |
Negotiable |
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GT25Q102 |
Other |
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Data Sheet |
Negotiable |
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GT25Q102(Q) |
Toshiba |
IGBT Transistors IGBT, 1200V, 25A |
Data Sheet |
Negotiable |
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