(China (Mainland))
Product Summary
The BUK436-800A is a PowerMOS transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The BUK436-800A is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
Parametrics
BUK436-800A absolute maximum ratings: (1)Drain-source voltage, VDS: 800 V; (2)Drain-gate voltage, RGS = 20 kΩ, VDGR: 800 V; (3)Gate-source voltage, ±VGS: 30 V; (4)Drain current (DC), Tmb = 25℃, ID: 4.0A; (5)Drain current (DC), Tmb = 100℃, ID: 2.5A; (6)Drain current (pulse peak value), Tmb = 25℃,IDM: 14 A; (7)Total power dissipation, Tmb = 25℃, Ptot: 125 W; (8)Storage temperature, Tstg: 55℃; (9)Junction temperature, Tj: 150℃.
Features
BUK436-800A features: (1)Drain-source breakdown voltage, VGS = 0 V; ID = 0.25 mA, V(BR)DSS: 800V; (2)Gate threshold voltage, VDS = VGS; ID = 1 mA, VGS(TO): 2.1 to 4.0 V; (3)Zero gate voltage drain current, VDS = 800 V; VGS = 0 V; Tj = 25 ℃, IDSS:2 to 20 μA; (4)Zero gate voltage drain current, VDS = 800 V; VGS = 0 V; Tj =125 ℃, IDSS: 0.1 to 1.0 mA; (5)Gate source leakage current, VGS = ±30 V; VDS = 0 V , IGSS: 10 to 100 nA; (6)Drain-source on-state resistance, VGS = 10 V; ID = 1.5 A, RDS(ON): 2.7 to 3.0Ω.
Diagrams
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 BUK436W-1000B |
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BUK436W-200A |
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BUK436W-200B |
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Negotiable |
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BUK436W-800A |
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Negotiable |
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BUK436W-800B |
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Negotiable |
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BUK438-1000A |
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Negotiable |
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