(China (Mainland))
Product Summary
The 2N2608 is a P-channel J-FET.
Parametrics
2N2608 absolute maximum ratings: (1)Gate-Source Voltage, VGSS: 30V; (2)Power Dissipation, PD: 300mW; (3)Operating Junction & Storage Temperature Range, Top, Tstg: -65 to +200℃.
Features
2N2608 features: (1)Gate-Source Breakdown Voltage, V(BR)GSS: 30Vdc min; (2)Gate Reverse Current, IGSS: 10Adc max; (3)Drain Current, IDDSS:-1.0mAdc; (4)Gate-Source Cutoff Voltage, VGS(off): 0.75Vdc.
Diagrams
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 2N2696 |
Other |
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Data Sheet |
Negotiable |
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2N2647 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Unijunction |
Data Sheet |
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2N2646 |
Central Semiconductor |
Transistors Bipolar (BJT) Silicon Unijuction |
Data Sheet |
Negotiable |
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2N2609 |
Central Semiconductor |
JFET P-Ch Junc FET |
Data Sheet |
Negotiable |
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