(China (Mainland))
Product Summary
The IS61LV51216-10TI is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricatedusingISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit de-sign techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the IS61LV51216-10TI assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels.
Parametrics
IS61LV51216-10TI absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND: –0.5 V to VDD+0.5 V; (2)VDD VDD Related to GND: –0.3 V to +4.0 V; (3)TSTG Storage Temperature: –65℃ to +150℃; (4)PT Power Dissipation: 1.0 W.
Features
IS61LV51216-10TI features: (1)High-speed access time: 8, 10, and 12 ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refreshrequired; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial and Automotive temperatures available; (10)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS61LV51216-10TI |
ISSI |
SRAM 8Mb 512Kx16 10ns 3.3v |
Data Sheet |
Negotiable |
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IS61LV51216-10TI-TR |
ISSI |
SRAM 8Mb 512Kx16 10ns 3.3v |
Data Sheet |
Negotiable |
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