IRFZ44N

55V, Single N-Channel, HEXFET Power MOSFET, TO-220AB, 49A, Ultra Low On-Resistance

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PartNumber:: IRFZ44N

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-11-01

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Product Summary

The IRFZ44N Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized the device design that HEXFET power MOSFET IRFZ44N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ44N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 49 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 35 A; (3)IDM Pulsed Drain Current: 160 A; (4)PD @TC = 25℃ Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ± 20 V; (7)Avalanche Current: 25 A; (8)Repetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N•m)℃.

Features

IRFZ44N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.