AUIRFS3107

AUIRFS3107, HEXFET Power MOSFET, TO-263, 230A, ± 20V

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Price:: US $0.80~1.50 / piece [Get Latest Price]

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	US $0.80~1.50

PartNumber:: AUIRFS3107

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-05-24

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Part Number:AUIRFS3107
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Product Summary

The AUIRFS3107 is a HEXFET Power MOSFET. Specifically designed for Automotive applications, the AUIRFS3107 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parametrics

AUIRFS3107 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 230A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 160A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 195A; (4)IDM, Pulsed Drain Current: 900A; (5)PD @TC = 25℃ Maximum Power Dissipation: 370W; (6)VGS, Gate-to-Source Voltage: ± 20V; (7)EAS, Single Pulse Avalanche Energy (Thermally Limited): 300mJ; (8)dv/dt, Peak Diode Recovery: 14V/ns; (9)TJ, Operating Junction and TSTG, Storage Temperature Range: -55 to + 175℃; (10)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃.

Features

AUIRFS3107 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Enhanced dV/dT and dI/dT capability; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax; (7)Lead-Free, RoHS Compliant; (8)Automotive Qualified.