Product Summary

The AO4800 is a Dual N-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs of AO4800 make a compact and efficient switch and synchronous rectifier combination for use in buck converters.

Parametrics

AO4800 absolute maximum ratings: (1)Drain-Source Voltage: 30 V max; (2)Gate-Source Voltage: ±12 V max; (3)Continuous Drain Current: 6.9 A at TA=25℃, 5.8 A at TA=70℃; (4)Pulsed Drain Current: 40 A; (5)Power Dissipation: 2 W at TA=25℃, 1.44 W at TA=70℃; (6)Junction and Storage Temperature Range: -55 to 150 ℃.

Features

AO4800 features: (1)VDS (V) = 30V; (2)ID = 6.9A; (3)RDS(ON) < 27mΩ (VGS = 10V); (4)RDS(ON) < 32mΩ (VGS = 4.5V); (5)RDS(ON) < 50mΩ (VGS = 2.5V).

Diagrams

AO4800 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
AO4800B
AO4800B

MOSFET DUAL N-CH 30V 6.9A 8-SOIC
Data Sheet
0-1: $0.47
1-25: $0.33
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
AO4800
AO4800
Other

Data Sheet
Negotiable